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MJD47 |
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| Part Number | MJD47 |
| Manufacturer | Inchange Semiconductor |
| Description | ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS... |
| Features |
T ℃/W ℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
INCHANGE Semiconductor
MJD47
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 10V
ICBO
Collector Cutoff Current
VCB= 350V; IE= 0
ICEO
Collector Cutoff Current
VCE= 150V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; V... |
| Document |
 MJD47 Data Sheet
PDF 189.75KB |
| Distributor | Stock | Price | Buy |
|---|
