| No. | Partie # | Fabricant | Description | Fiche Technique |
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Fairchild Semiconductor |
N-Channel MOSFET General Description Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 |
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Fairchild Semiconductor |
Dual N-Channel Digital FET 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Bod |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET • -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. • • Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applicati |
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Fairchild Semiconductor |
Digital FET/ P-Channel • -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V. • • • Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model). Compa |
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Fairchild Semiconductor |
N-Channel Logic Level PowerTrench MOSFET • 2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V. • • • Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications • |
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Fairchild Semiconductor |
P-Channel Logic Level PowerTrench MOSFET • -1.6 A, -30 V. RDS(ON) = 0.19 Ω @ VGS = -10 V RDS(ON) = 0.30 Ω @ VGS = -4.5 V. • • • Low gate charge (3.5nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applicati |
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Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET • –1.5 A, –20 V. RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Comp |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET • • • • –1.5 A, –20 V. RDS(ON) = 0.145 Ω @ VGS = –4.5 V RDS(ON) = 0.210 Ω @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package Applications • • • Load swit |
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Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 115 mΩ @ VGS = 2.5 V • Fast switching speed • Low gate charge (3.3 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. Appli |
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Fairchild Semiconductor |
N-Channel MOSFET • 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V • Low gate charge (3.7nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Load switch • Battery protection • Pow |
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Fairchild Semiconductor |
Dual P-Channel/ Digital FET -25 V, -0.41 A continuous, -1.5 A peak. RDS(ON) = 1.1 Ω @ VGS= -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human |
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Fairchild Semiconductor |
Dual P-Channel/ Digital FET • –0.5 A, –20 V. RDS(ON) = 780 mΩ @ VGS = –4.5 V RDS(ON) = 1200 mΩ @ VGS = –2.5 V • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). • Compact industry standard SC70-6 surface mount package Applicati |
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Fairchild Semiconductor |
Dual P-Channel/ Digital FET • -0.5A, -20V. r DS(ON) = 780mΩ (Max)@ VGS = -4.5 V rDS(ON) = 1200mΩ (Max) @ V GS = -2.5 V • Very low level gate drive requirements allowing direct operation in 3V circuits (V GS(TH) < 1.5V). • Gate-Source Zener for ESD ruggedness (>1.4kV Human Body |
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Fairchild Semiconductor |
Integrated Load Switch a small N-Channel MOSFET (Q1) together with a large P-Channel Power MOSFET (Q2) in a single SC70-6 package. Features VDROP =0.2V @ VIN=12V, I L=0.36A. R (ON) = 0.55Ω. VDROP =0.2V @ VIN=5V, I L=0.27A. R (ON) = 0.75Ω. Very small package outline (SC70 |
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Fairchild Semiconductor |
MOSFET • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A Max rDS(on) = 330m: at VGS = -1.5V, ID = -1.0A Very low level gate drive requirements allowing opera |
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Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET • 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. • • • Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications |
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Fairchild Semiconductor |
N-Channel Digital FET • 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V. • • • • Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD rug |
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Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V • Fast switching speed • Low gate charge (4.5 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and curr |
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Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET • –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compac |
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