FDG6318P |
Part Number | FDG6318P |
Manufacturer | Fairchild Semiconductor |
Description | These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance. Th... |
Features |
• –0.5 A, –20 V. RDS(ON) = 780 mΩ @ VGS = –4.5 V RDS(ON) = 1200 mΩ @ VGS = –2.5 V • Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). • Compact industry standard SC70-6 surface mount package Applications • Battery management S G D D G Pin 1 S 1 or 4 6 or 3 D 5 or 2 G 4 or 1 S G 2 or 5 S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parame... |
Document |
FDG6318P Data Sheet
PDF 123.67KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDG6318PZ |
Fairchild Semiconductor |
Dual P-Channel/ Digital FET | |
2 | FDG6313N |
Fairchild Semiconductor |
Dual N-Channel Digital FET | |
3 | FDG6316P |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET | |
4 | FDG6316P |
ON Semiconductor |
P-Channel MOSFET | |
5 | FDG6317NZ |
ON Semiconductor |
Dual N-Channel MOSFET |