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FDG311N |
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| Part Number | FDG311N |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge fo... |
| Features |
• 1.9 A, 20 V. RDS(ON) = 0.115 Ω @ VGS = 4.5 V RDS(ON) = 0.150 Ω @ VGS = 2.5 V. • • • Low gate charge (3nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications • • • Load switch Power management DC/DC converter D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25 C unless otherwise noted Parameter Ratings 20 (Note 1a) Units V V A W °C ±8 1.9 6 0.75 0.48 -55 to +150 Powe... |
| Document |
 FDG311N Data Sheet
PDF 89.54KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG312P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDG312P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDG313N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 4 | FDG313N |
ON Semiconductor |
N-Channel Digital FET |
|
| 5 | FDG314P |
Fairchild Semiconductor |
Digital FET/ P-Channel |
|