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FDG314P |
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| Part Number | FDG314P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minim... |
| Features |
• -0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS = -2.7 V. • • • Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model). Compact industry standard SC70-6 surface mount package. Applications • Power Management • Load switch • Signal switch D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T J, T stg ESD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted Parameter Rat... |
| Document |
 FDG314P Data Sheet
PDF 84.38KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG311N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 2 | FDG312P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDG312P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDG313N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 5 | FDG313N |
ON Semiconductor |
N-Channel Digital FET |
|