FDG328P |
Part Number | FDG328P |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide ... |
Features |
• • • • –1.5 A, –20 V. RDS(ON) = 0.145 Ω @ VGS = –4.5 V RDS(ON) = 0.210 Ω @ VGS = –2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package Applications • • • Load switch Power management DC/DC converter S D D 1 2 G 6 5 4 Pin 1 D D 3 SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –20 ± 12 (Note 1a) Units V V A W °C –1.5 –6 0.75 0.48 -55 to +150 Power Dissipat... |
Document |
FDG328P Data Sheet
PDF 76.77KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDG328P |
ON Semiconductor |
P-Channel MOSFET | |
2 | FDG326P |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET | |
3 | FDG327N |
Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET | |
4 | FDG327N |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDG327NZ |
Fairchild Semiconductor |
MOSFET |