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FDG313N |
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| Part Number | FDG313N |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize... |
| Features |
• 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V RDS(on) = 0.60 Ω @ VGS = 2.7 V. • • • • Low gate charge (1.64 nC typical) Very low level gate drive requirements allowing direct operation in 3V circuits (VGS(th) < 1.5V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package. Applications • Load switch • Battery protection • Power management D D S 1 6 2 5 pin 1 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless oth... |
| Document |
 FDG313N Data Sheet
PDF 713.24KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG313N |
ON Semiconductor |
N-Channel Digital FET |
|
| 2 | FDG311N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDG312P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 4 | FDG312P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDG314P |
Fairchild Semiconductor |
Digital FET/ P-Channel |
|