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FDG6313N |
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| Part Number | FDG6313N |
| Manufacturer | Fairchild Semiconductor |
| Description | These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially ... |
| Features |
25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). Compact industry standard SC70-6 surface mount package.
SC70-6
SOT-23
SuperSOTTM -6
SuperSOTTM -8
SO-8
SOT-223
G2 D1
S2
1 or 4 *
6 or 3
.33
2 or 5 5 or 2
SC70-6
S1
G1
D2
3 or 6 4 or 1
*
* The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affec... |
| Document |
 FDG6313N Data Sheet
PDF 92.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG6316P |
Fairchild Semiconductor |
P-Channel 1.8V Specified PowerTrench MOSFET |
|
| 2 | FDG6316P |
ON Semiconductor |
P-Channel MOSFET |
|
| 3 | FDG6317NZ |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDG6317NZ |
Fairchild Semiconductor |
Dual 20v N-Channel PowerTrench MOSFET |
|
| 5 | FDG6318P |
Fairchild Semiconductor |
Dual P-Channel/ Digital FET |
|