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FDG330P |
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| Part Number | FDG330P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • –2 A, –12 V. RDS(ON) = 110 ... |
| Features |
• –2 A, –12 V. RDS(ON) = 110 mΩ @ VGS = –4.5 V RDS(ON) = 150 mΩ @ VGS = –2.5 V RDS(ON) = 215 mΩ @ VGS = –1.8 V Applications • Battery management • Load switch • Low gate charge • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package D D S 1 6 2 5 Pin 1 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –12 ±8 (Note 1a) Units V V A W °C –2 –6 0.75 0.48 –55 to +150 ... |
| Document |
 FDG330P Data Sheet
PDF 150.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG332PZ |
Fairchild Semiconductor |
MOSFET |
|
| 2 | FDG311N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDG312P |
Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET |
|
| 4 | FDG312P |
ON Semiconductor |
P-Channel MOSFET |
|
| 5 | FDG313N |
Fairchild Semiconductor |
N-Channel Digital FET |
|