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FDG312P |
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| Part Number | FDG312P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge fo... |
| Features |
• -1.2 A, -20 V. RDS(on) = 0.18 Ω @ VGS = -4.5 V RDS(on) = 0.25 Ω @ VGS = -2.5 V. • • Low gate charge (3.3 nC typical). High performance trench technology for extremely low RDS(ON). Compact industry standard SC70-6 surface mount package. Applications • Load switch • Battery protection • Power management • D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter Ratings -20 (Note 1) Units V V A W ±8 -1.2 -6 0.75 0.55 0.48 -55 to +150 ... |
| Document |
 FDG312P Data Sheet
PDF 206.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDG312P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDG311N |
Fairchild Semiconductor |
N-Channel 2.5V Specified PowerTrench MOSFET |
|
| 3 | FDG313N |
Fairchild Semiconductor |
N-Channel Digital FET |
|
| 4 | FDG313N |
ON Semiconductor |
N-Channel Digital FET |
|
| 5 | FDG314P |
Fairchild Semiconductor |
Digital FET/ P-Channel |
|