Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2021 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technol.
z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323
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1 3
21
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21 = Device Code = Month (A~Z) Marking
Applications
Device
Order information
Package SOT-323 Shipping 3000/Reel&Tape
z z z z z
DC-DC converter circuit Small Signal Switch Load Switch Level Shift
WNM2021-3/TR
Will Semiconductor Ltd.
1
Dec, 2010 - Rev.1.0
WNM2021
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET |
|
| 2 | WNM2020 |
TY Semiconductor |
N-Channel MOSFET |
|
| 3 | WNM2023 |
TY Semiconductor |
N-Channel MOSFET |
|
| 4 | WNM2024 |
Will Semiconductor |
N-Channel MOSFET |
|
| 5 | WNM2024 |
TY Semiconductor |
N-Channel MOSFET |
|
| 6 | WNM2025 |
TY Semiconductor |
N-Channel MOSFET |
|
| 7 | WNM2027 |
TY Semiconductor |
N-Channel MOSFET |
|
| 8 | WNM2029 |
Will Semiconductor |
N-Channel MOSFET |
|
| 9 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET |
|
| 10 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET |
|
| 11 | WNM2030 |
Will Semiconductor |
N-Channel MOSFET |
|
| 12 | WNM2030-3 |
ElecSuper |
N-channel MOSFET |
|