WNM2027 - TY Semiconductor

WNM2027 N-Channel MOSFET

The WNM2027 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) D 3 with low gate 1 G 2 S charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2027 is Pb-free. Configuration (Top View) Features 3 z z z z z Trench Technolo.

Features

3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6
* 2 = Device Code = Month (A~Z) Marking WT6
* Applications z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Device Order Information Package SOT-23 Shipping 3000/Tape&Reel WNM2027-3/TR http://www.twtysemi.com [email protected] 1 of 3 Product specification WNM2027 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltag.