Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) SOT-23 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNM2020 is Pb-free. 1 G D 3 2 S Features Pin configuration (Top view) z z z z z Trench.
Pin configuration (Top view) z z z z z Trench Technology Supper high density cell design
3
W28
*
Excellent ON resistance
1 2
Extremely Low Threshold Voltage Small package SOT-23 W28 = Device Code
* = Month (A~Z) Marking
Applications
Order information
z z z z z DC-DC converter circuit Small Signal Switch Load Switch Level Shift Device WNM2020-3/TR Package SOT-23 Shipping 3000/Reel&Tape
http://www.twtysemi.com
[email protected]
1 of 3
Product specification
WNM2020 Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissip.
WNM2020 - Will Semiconductor
SOT-23 The WNM2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | WNM2021 |
Will Semiconductor |
N-Channel MOSFET |
|
| 2 | WNM2023 |
TY Semiconductor |
N-Channel MOSFET |
|
| 3 | WNM2024 |
Will Semiconductor |
N-Channel MOSFET |
|
| 4 | WNM2024 |
TY Semiconductor |
N-Channel MOSFET |
|
| 5 | WNM2025 |
TY Semiconductor |
N-Channel MOSFET |
|
| 6 | WNM2027 |
TY Semiconductor |
N-Channel MOSFET |
|
| 7 | WNM2029 |
Will Semiconductor |
N-Channel MOSFET |
|
| 8 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET |
|
| 9 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET |
|
| 10 | WNM2030 |
Will Semiconductor |
N-Channel MOSFET |
|
| 11 | WNM2030-3 |
ElecSuper |
N-channel MOSFET |
|
| 12 | WNM2034 |
Will Semiconductor |
N-Channel MOSFET |
|