The WNM2030-3/TR-ES is N-Channel enhancement MOS Field Effect Transistor. Uses advanced technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2030-3/TR-ES is Pb-free. 2. Features 20V, RDS(ON)=125mΩ(Typ.) @ VGS=4.5V RDS(ON)=190mΩ(Typ.) .
20V, RDS(ON)=125mΩ(Typ.) @ VGS=4.5V RDS(ON)=190mΩ(Typ.) @VGS=2.5V
High density cell design for low RDS(on)
Material: Halogen free
Reliable and rugged
Avalanche Rated
Low leakage current
3. Applications
PWM applications
Load switch
Power management in portable/desktop PCs
DC/DC conversion
4. Ordering Information
Part Number
Package Marking Material Packing
WNM2030-3/TR-ES SOT-723
34KR
Halogen Tape &
free
Reel
Quantity per reel 8,000
PCS
Flammability Rating
UL 94V-0
Reel Size
7 inches
5. Pin Configuration and Functions
Pin
Function
Outline
1
Gate
3
2
So.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNM2030 |
Will Semiconductor |
N-Channel MOSFET | |
2 | WNM2034 |
Will Semiconductor |
N-Channel MOSFET | |
3 | WNM2034 |
TY Semiconductor |
N-Channel MOSFET | |
4 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET | |
5 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET | |
6 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET | |
7 | WNM2020 |
TY Semiconductor |
N-Channel MOSFET | |
8 | WNM2021 |
Will Semiconductor |
N-Channel MOSFET | |
9 | WNM2023 |
TY Semiconductor |
N-Channel MOSFET | |
10 | WNM2024 |
Will Semiconductor |
N-Channel MOSFET | |
11 | WNM2024 |
TY Semiconductor |
N-Channel MOSFET | |
12 | WNM2025 |
TY Semiconductor |
N-Channel MOSFET |