The WNM2029 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2029 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellen.
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-323
Applications
SOT-323
D 3
12 GS
Pin configuration (Top view)
3
29
*
12
29 = Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Device WNM2029-3/TR
Package SOT-323
Shipping 3000/Reel&Tape
Will Semiconductor Ltd. 1 Jan, 2011 - Rev.1.0
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET | |
2 | WNM2020 |
TY Semiconductor |
N-Channel MOSFET | |
3 | WNM2021 |
Will Semiconductor |
N-Channel MOSFET | |
4 | WNM2023 |
TY Semiconductor |
N-Channel MOSFET | |
5 | WNM2024 |
Will Semiconductor |
N-Channel MOSFET | |
6 | WNM2024 |
TY Semiconductor |
N-Channel MOSFET | |
7 | WNM2025 |
TY Semiconductor |
N-Channel MOSFET | |
8 | WNM2027 |
TY Semiconductor |
N-Channel MOSFET | |
9 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET | |
10 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET | |
11 | WNM2030 |
Will Semiconductor |
N-Channel MOSFET | |
12 | WNM2030-3 |
ElecSuper |
N-channel MOSFET |