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The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2016 is Pb-free. Features z Trench Technology z Supper high density cell design z Excellent ON.
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
SOT-23
D 3
12 GS
Configuration (Top View)
3 WT6
*
12
WT6
*
= Device Code = Month (A~Z) Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch
Order Information
Device
Package
WNM2016-3/TR SOT-23
Shipping 3000/Tape&Reel
Will Semiconductor Ltd. 1 Oct, 2014 - Rev.1.3
WNM2016
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise.
WNM2016 - TY Semiconductor
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide.
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