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WNM2021 |
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| Part Number | WNM2021 |
| Manufacturer | Will Semiconductor |
| Description | The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use... |
| Features |
z z z z z Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Voltage Small package SOT-323 *
1 3
21*
2
21 = Device Code = Month (A~Z) Marking
Applications
Device
Order information
Package SOT-323 Shipping 3000/Reel&Tape
z z z z z
DC-DC converter circuit Small Signal Switch Load Switch Level Shift
WNM2021-3/TR
Will Semiconductor Ltd.
1
Dec, 2010 - Rev.1.0
WNM2021
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Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissi... |
| Document |
 WNM2021 Data Sheet
PDF 247.01KB |
| Distributor | Stock | Price | Buy |
|---|
