Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
The WNM2025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) D 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2025 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench T.
z z z z z Trench Technology Supper high density cell design
1
3
W25
*
2
Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23-3L Marking W25 = Device Code
* = Month (A~Z)
Applications
z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Device
Order information
Package SOT-23-3L Shipping 3000/Reel&Tape
WNM2025-3/TR
http://www.twtysemi.com
[email protected]
1 of 3
Product specification
Absolute Maximum ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | WNM2020 |
Will Semiconductor |
N-Channel MOSFET |
|
| 2 | WNM2020 |
TY Semiconductor |
N-Channel MOSFET |
|
| 3 | WNM2021 |
Will Semiconductor |
N-Channel MOSFET |
|
| 4 | WNM2023 |
TY Semiconductor |
N-Channel MOSFET |
|
| 5 | WNM2024 |
Will Semiconductor |
N-Channel MOSFET |
|
| 6 | WNM2024 |
TY Semiconductor |
N-Channel MOSFET |
|
| 7 | WNM2027 |
TY Semiconductor |
N-Channel MOSFET |
|
| 8 | WNM2029 |
Will Semiconductor |
N-Channel MOSFET |
|
| 9 | WNM2016 |
Will Semiconductor |
N-Channel MOSFET |
|
| 10 | WNM2016 |
TY Semiconductor |
N-Channel Power MOSFET |
|
| 11 | WNM2030 |
Will Semiconductor |
N-Channel MOSFET |
|
| 12 | WNM2030-3 |
ElecSuper |
N-channel MOSFET |
|