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The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2024 is Pb-free. Features z Trench Technology z Supper high density cell design z Excelle.
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
Applications
WNM2024
Http//:www.willsemi.com
SOT-23
D 3
12 GS
Pin configuration (Top view)
3
W24
*
12
W24= Device Code
* = Month (A~Z)
Marking
Order information
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Device WNM2024-3/TR
Package SOT-23
Shipping 3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.1
Absolute Maximum rati.
WNM2024 - TY Semiconductor
D The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) 3 technology and desig.
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