VBE1695 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS = 4.5 V TO-252 ID (A) 18 15 Qg (Typ.) 19.8 G D S Drain Connected to Tab FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC.
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
APPLICATIONS
• DC/DC Converters
• DC/AC Inverters
• Motor Drives
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C
L = 0.1 mH TC = 25 °C TA = 25 °Cc
VDS
60
V
VGS
.
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---|---|---|---|---|
1 | VBE1638 |
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2 | VBE1106N |
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3 | VBE1206N |
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4 | VBE17-06NO7 |
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5 | VBE17-12NO7 |
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6 | VBE20 |
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7 | VBE2610N |
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8 | VBE2625 |
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9 | VBE2658 |
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10 | VBE55-06NO7 |
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ECO-PAC Single Phase Rectifier Bridge WITH FAST RECOVERY EPITAXIAL DIODES (FRED) | |
11 | VBE60-06A |
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12 | VB024 |
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