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Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) VBE 20 I = 20 A dAV VRRM = 2000 V trr = 70 ns VRSM V 2000 VRRM V 2000 Type VBE 20-20NO1 15 1 10 6 5 10 6 Symbol IdAV IFSM I2dt TVJ TVJM Tstg VISOL Md Weight Conditions TC = 65°C, module TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine T =T VJ VJM V =0 R t = 10 ms (50 Hz), sine TV.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VBE2610N |
VBsemi |
P-Channel MOSFET |
|
| 2 | VBE2625 |
VBsemi |
P-Channel MOSFET |
|
| 3 | VBE2658 |
VBsemi |
P-Channel MOSFET |
|
| 4 | VBE1106N |
VBsemi |
N-Channel MOSFET |
|
| 5 | VBE1206N |
VBsemi |
N-Channel MOSFET |
|
| 6 | VBE1638 |
VBsemi |
N-Channel MOSFET |
|
| 7 | VBE1695 |
VBsemi |
N-Channel MOSFET |
|
| 8 | VBE17-06NO7 |
IXYS |
Single Phase Rectifier Bridge |
|
| 9 | VBE17-12NO7 |
IXYS |
Single Phase Rectifier Bridge |
|
| 10 | VBE55-06NO7 |
IXYS Corporation |
ECO-PAC Single Phase Rectifier Bridge WITH FAST RECOVERY EPITAXIAL DIODES (FRED) |
|
| 11 | VBE60-06A |
IXYS Corporation |
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) |
|
| 12 | VB024 |
STMicroelectronics |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC |
|