VBE1106N - VBsemi

VBE1106N N-Channel MOSFET

VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.) 21nC FEATURES • TrenchFET® power MOSFET • 100 % UIS tested TO-252 APPLICATIONS D • Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot.

Features

• TrenchFET® power MOSFET
• 100 % UIS tested TO-252 APPLICATIONS D
• Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA .