VBE 55-06NO7 ECO-PAC TM Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) IdAV = 68 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Typ A N D VBE 55-06NO7 K Symbol IdAV x IdAVM IFSM Conditions TC = 100°C, module TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.
• Package with DCB ceramic base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering Applications
• Supplies for DC power equipment
• Input and output rectifiers for high frequency
• Battery DC power supplies
• Field supply for DC motors Advantages
• Space and weight savings
• Improved temperature and power cycling capability
• Small and light weight
• Low noise switching Dimensions in mm (1 mm = 0.0394")
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
TVJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC Rth.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VBE1106N |
VBsemi |
N-Channel MOSFET | |
2 | VBE1206N |
VBsemi |
N-Channel MOSFET | |
3 | VBE1638 |
VBsemi |
N-Channel MOSFET | |
4 | VBE1695 |
VBsemi |
N-Channel MOSFET | |
5 | VBE17-06NO7 |
IXYS |
Single Phase Rectifier Bridge | |
6 | VBE17-12NO7 |
IXYS |
Single Phase Rectifier Bridge | |
7 | VBE20 |
IXYS |
Single Phase Rectifier Bridge | |
8 | VBE2610N |
VBsemi |
P-Channel MOSFET | |
9 | VBE2625 |
VBsemi |
P-Channel MOSFET | |
10 | VBE2658 |
VBsemi |
P-Channel MOSFET | |
11 | VBE60-06A |
IXYS Corporation |
Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) | |
12 | VB024 |
STMicroelectronics |
HIGH VOLTAGE IGNITION COIL DRIVER POWER IC |