VBE2625 - VBsemi

VBE2625 P-Channel MOSFET

VBE2625 P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID (A) - 50 - 45 TO-252 FEATURES • TrenchFET® Power MOSFET • Material categorization: APPLICATIONS • Load Switch S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted).

Features

• TrenchFET® Power MOSFET
• Material categorization: APPLICATIONS
• Load Switch S www.VBsemi.com G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 60 V VGS ± 20 Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C ID - 50 - 40 A IDM - 160 Avalanche Current IAS - 50 Single Pulse Avalanche Energya L = 0.1 mH EAS 125 mJ Power Dissipation TC = 25 °C TA = 25 °C PD 113c 2.5b, c W Operating Junction and Storage Tempe.