VBE2610N - VBsemi

VBE2610N P-Channel MOSFET

VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ) 10 FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwis.

Features

• TrenchFET® Power MOSFET
• 100 % UIS Tested APPLICATIONS
• Load Switch TO-252 S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Current IDM - 30 A Continuing Source Current (Diode Conduction) IS - 20 Avalanche Current IAS - 20 Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH EAS 7.2 mJ TC = 25 °C TA = 25 °C PD 34a 4b W Operating Junction and Storage.