VBE1206N N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 30 D TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMU.
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
G
GD S
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Pulse Avalanche Energy
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
P.
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