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VBE1695 |
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| Part Number | VBE1695 |
| Manufacturer | VBsemi |
| Description | VBE1695 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS = 4.5 V TO-252 ID (A) 18 15 Qg (Typ.) 19.8 G D S Drain Conne... |
| Features |
• TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see APPLICATIONS • DC/DC Converters • DC/AC Inverters • Motor Drives D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C L = 0.1 mH TC = 25 °C TA = 25 °Cc VDS 60 V VGS ... |
| Document |
 VBE1695 Data Sheet
PDF 274.47KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VBE1638 |
VBsemi |
N-Channel MOSFET |
|
| 2 | VBE1106N |
VBsemi |
N-Channel MOSFET |
|
| 3 | VBE1206N |
VBsemi |
N-Channel MOSFET |
|
| 4 | VBE17-06NO7 |
IXYS |
Single Phase Rectifier Bridge |
|
| 5 | VBE17-12NO7 |
IXYS |
Single Phase Rectifier Bridge |
|