VBE2658 - VBsemi

VBE2658 P-Channel MOSFET

VBE2658 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.046 at VGS = - 10 V 0.058 at VGS = - 4.5 V ID (A)d - 35 - 30 Qg (Typ) 26 TO-252 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • High Side .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• High Side Switch for Full Bridge Converter
• DC/DC Converter for LCD Display S GDS Top View Drain Connected to Tab G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise note) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current, Single Pulse Repetitive Avalanche Energy, Single Pulsea .