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VBE1206N |
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| Part Number | VBE1206N |
| Manufacturer | VBsemi |
| Description | VBE1206N N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 30 D TO-252 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Tempera... |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C P... |
| Document |
 VBE1206N Data Sheet
PDF 298.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VBE1106N |
VBsemi |
N-Channel MOSFET |
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| 2 | VBE1638 |
VBsemi |
N-Channel MOSFET |
|
| 3 | VBE1695 |
VBsemi |
N-Channel MOSFET |
|
| 4 | VBE17-06NO7 |
IXYS |
Single Phase Rectifier Bridge |
|
| 5 | VBE17-12NO7 |
IXYS |
Single Phase Rectifier Bridge |
|