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VBE1106N |
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| Part Number | VBE1106N |
| Manufacturer | VBsemi |
| Description | VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.) 21nC FEATURES • TrenchFET® power MOSFET • 100 % ... |
| Features |
• TrenchFET® power MOSFET • 100 % UIS tested TO-252 APPLICATIONS D • Primary side switch www.VBsemi.com G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA ... |
| Document |
 VBE1106N Data Sheet
PDF 251.90KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VBE1206N |
VBsemi |
N-Channel MOSFET |
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| 2 | VBE1638 |
VBsemi |
N-Channel MOSFET |
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| 3 | VBE1695 |
VBsemi |
N-Channel MOSFET |
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| 4 | VBE17-06NO7 |
IXYS |
Single Phase Rectifier Bridge |
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| 5 | VBE17-12NO7 |
IXYS |
Single Phase Rectifier Bridge |
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