TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8121 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 .
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCA8120 |
Toshiba |
Silicon P-Channel MOSFET | |
2 | TPCA8128 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
3 | TPCA8102 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
4 | TPCA8103 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
5 | TPCA8104 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
6 | TPCA8105 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
7 | TPCA8106 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
8 | TPCA8107-H |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
9 | TPCA8108 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
10 | TPCA8109 |
Toshiba Semiconductor |
Silicon P Channel MOS Type | |
11 | TPCA8131 |
Toshiba |
Silicon P-Channel MOSFET | |
12 | TPCA8135 |
Toshiba Semiconductor |
MOSFETs Silicon P-Channel MOS |