TPCA8105 - Toshiba Semiconductor

TPCA8105 Silicon P-Channel MOSFET

TPCA8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8105 Notebook PC Applications Portable Equipment Applications • Small footprint due to compact and slim package • Low drain-source ON-resistance : RDS (ON) = 23 mΩ (typ.) (VGS = − 4.5V） • High forward transfer admittance :|Yfs| = 14 S (typ.) • Low leakage current : IDSS = −1.

Features

Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit −12 V −12 V ±8 V −6 A −24 20 2.8 W 1.6 25.1 mJ −6 A 0.8 mJ 150 °C −55 to 150 °C 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.076 g (typ.) Circuit Configuration 8765 1234 Note: For (Note 1), (Note 2), (Note 3), (Note 4), refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage .