MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8131 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 12.4 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 12.4 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPCA8131 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25/+20 Drain current (DC) (Note 1) ID -13 A Drain current (pulsed) (Note 1) IDP -39 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCA8135 |
Toshiba Semiconductor |
MOSFETs Silicon P-Channel MOS | |
2 | TPCA8102 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
3 | TPCA8103 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
4 | TPCA8104 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
5 | TPCA8105 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
6 | TPCA8106 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
7 | TPCA8107-H |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
8 | TPCA8108 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
9 | TPCA8109 |
Toshiba Semiconductor |
Silicon P Channel MOS Type | |
10 | TPCA8120 |
Toshiba |
Silicon P-Channel MOSFET | |
11 | TPCA8121 |
Toshiba |
Field Effect Transistor | |
12 | TPCA8128 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |