TPCA8104 - Toshiba Semiconductor

TPCA8104 Silicon P-Channel MOSFET

TPCA8104 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III) TPCA8104 High-Side Switching Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 11 mΩ (typ.) • High forward transfer admittance:|Yfs| = 50 S (typ.) • Low leakage current: IDSS = -10 μA (max) (.

Features

(Note 3) Avalanche current Repetitive avalanche energy (Tc = 25°C) (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Note: For Notes 1 to 4, see the next page. -60 V -60 V ±20 V -40 A -120 45 2.8 W 1.6 116 mJ -40 A 4.5 mJ 150 °C −55 to 150 °C 1, 2, 3: Source 5, 6, 7, 8: Drain 4: Gate JEDEC ― JEITA ― TOSHIBA 2-5Q1A Weight: 0.080 g (typ.) Circuit Configuration 8765 1234 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in tempera.