TPCA8121 |
Part Number | TPCA8121 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | TPCA8121 MOSFETs Silicon P-Channel MOS (U-MOS) TPCA8121 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-sourc... |
Features |
(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 2.4 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source 5, 6, 7, 8: Drain
4: Gate
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalan... |
Document |
TPCA8121 Data Sheet
PDF 256.48KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCA8120 |
Toshiba |
Silicon P-Channel MOSFET | |
2 | TPCA8128 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
3 | TPCA8102 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
4 | TPCA8103 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
5 | TPCA8104 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |