TPCA8103 - Toshiba Semiconductor

TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

www.DataSheet4U.com TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.5±0.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (.

Features

te 1) (Tc=25°C) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) JEDEC JEITA TOSHIBA ― ― 2-5Q1A Drain power dissipation Drain power dissipation Drain power dissipation Weight: 0.076 g (typ.) 1.6 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 208 − 40 4.5 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 3.5±0.2 1.1±0.2 0.05 S 0.166±0.05 4 1 2004-01-16 TPCA8103 Therm.