TPCA8109 - Toshiba Semiconductor

TPCA8109 Silicon P Channel MOS Type

TPCA8109 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPCA8109 Lithium Ion Battery Applications Power Management Switch Applications 8 Unit: mm 1.27 0.4 ± 0.1 5 0.05 M A • • • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −.

Features

pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range JEDEC 75 −24 150 −55 to 150 mJ A °C °C ― ― 2-5Q1A JEITA TOSHIBA Weight: 0.076 g (typ.) Note: For Notes 1 to 3, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropri.