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www.DataSheet4U.com TPCA8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8102 0.5±0.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 4.5mΩ (t.
wer dissipation Weight: 0.076 g (typ.) 1.6 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 208 − 40 4.5 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 EAR Tch Tstg Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 3.5±0.2 Characteristics Symbol Rating Unit 0.6±0.1 1.1±0.2 Maximum Ratings (Ta = 25°C) 0.05 S 0.166±0.05 4 1 2003-08-29 TPCA8102.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TPCA8103 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type |
|
| 2 | TPCA8104 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 3 | TPCA8105 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 4 | TPCA8106 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 5 | TPCA8107-H |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 6 | TPCA8108 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 7 | TPCA8109 |
Toshiba Semiconductor |
Silicon P Channel MOS Type |
|
| 8 | TPCA8120 |
Toshiba |
Silicon P-Channel MOSFET |
|
| 9 | TPCA8121 |
Toshiba |
Field Effect Transistor |
|
| 10 | TPCA8128 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |
|
| 11 | TPCA8131 |
Toshiba |
Silicon P-Channel MOSFET |
|
| 12 | TPCA8135 |
Toshiba Semiconductor |
MOSFETs Silicon P-Channel MOS |
|