TPCA8108 - Toshiba Semiconductor

TPCA8108 Silicon P-Channel MOSFET

TPCA8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPCA8108 High-Side Switching Applications Motor Drive Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 7.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 41S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −.

Features

erature range Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR EAR Tch Tstg Rating Unit −40 V −40 V ±20 V −40 A −120 45 W 2.8 W 1.6 W 148 mJ −40 A 4.5 mJ 150 °C −55 to 150 °C S 0.05 S 1 4 1.1±0.2 0.6±0.1 3.5±0.2 4.25±0.2 8 1,2,3:SOURCE 5,6,7,8:DRAIN 5 0.8±0.1 4:GATE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A Weight: 0.080 g (typ.) Circuit Configuration 8765 Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. Using continuously under heavy loads (e.g. the application of high 1234 temperature/current/voltage and the significant change .