TPCA8103 |
Part Number | TPCA8103 |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | www.DataSheet4U.com TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.5±0.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applic... |
Features |
te 1) (Tc=25°C) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b)
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Drain power dissipation Drain power dissipation
Drain power dissipation
Weight: 0.076 g (typ.)
1.6 W
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy
208 − 40 4.5 150 −55 to 150
mJ A mJ °C °C
Circuit Configuration
8 7 6 5
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
1
2
3
3.5±0.2
1.1±0.2
0.05 S
0.166±0.05
4
1
2004-01-16
TPCA8103
Therm... |
Document |
TPCA8103 Data Sheet
PDF 280.62KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCA8102 |
Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
2 | TPCA8104 |
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Silicon P-Channel MOSFET | |
3 | TPCA8105 |
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Silicon P-Channel MOSFET | |
4 | TPCA8106 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
5 | TPCA8107-H |
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