Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF2328 N-Channel 100-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) 0.300 @ VGS = 10 V ID (A) 1.5 (SOT-23) G1 S2 3D Top View TF2328(D82TF) *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage Gate-Source Volta.
aximum 100 170 55 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TF2323 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
2 | TF2300 |
Tuofeng Semiconductor |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | TF2301 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
4 | TF2301A |
Tuofeng Semiconductor |
P-Channel MOSFET | |
5 | TF2302 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
6 | TF2302A |
Tuofeng Semiconductor |
N-Channel MOSFET | |
7 | TF2303 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
8 | TF2304 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
9 | TF2305B |
Tuofeng Semiconductor |
P-Channel MOSFET | |
10 | TF2306 |
Tuofeng Semiconductor |
N-Channel MOSFET | |
11 | TF2307 |
Tuofeng Semiconductor |
P-Channel MOSFET | |
12 | TF2308 |
Tuofeng Semiconductor |
N-Channel MOSFET |