TDM3428 - Techcode

TDM3428 N-Channel Enhancement Mode MOSFET

The TDM3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES  RDS(ON) < 9.8mΩ @ VGS=4.5V RDS(ON) < 7.2mΩ @ VGS=10V  High Power and current handling capability  Lead free product is available  Surface Mount Package Application  PWM a.

Features

 RDS(ON) < 9.8mΩ @ VGS=4.5V RDS(ON) < 7.2mΩ @ VGS=10V
 High Power and current handling capability
 Lead free product is available
 Surface Mount Package Application
 PWM applications
 Load switch
 Power management DATASHEET TDM3428 ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain‐Source Voltage VDS Gate‐Source Voltage VGS Drain Current @ Continuous(Note 1) ID（TC=25℃） ID（TC=100℃） Drain Current @ Current‐Pulsed IDP（TC=25℃） IDP（TC=100℃） Maximum Power Dissipation PD(TC=25℃) PD(TC=100℃) Operating Junction and Storage Temperature Range TJ,TSTG THE.