The TDM3421 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) < 32mΩ @ VGS=‐4.5V RDS(ON) < 19mΩ @ VGS=‐10V Reliable and Rugged ESD protection pass 2KV Lead free product is available PPAK‐3*3‐8 Package.
RDS(ON) < 32mΩ @ VGS=‐4.5V RDS(ON) < 19mΩ @ VGS=‐10V
Reliable and Rugged
ESD protection pass 2KV
Lead free product is available
PPAK‐3
*3‐8 Package
Application
PWM applications
Load switch
Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source Voltage Gate‐Source Voltage Diode Continuous Forward Current Pulsed Drain Current Continuous Drain Current
Maximum Power Dissipation
Continuous Drain Current
Maximum Power Dissipation (note1) Maximum Junction Temperature Storage Temperature Range Thermal Resistance‐Junctio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TDM3424 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
2 | TDM3426 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
3 | TDM3426B |
Techcode |
N-Channel Enhancement Mode MOSFET | |
4 | TDM3428 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
5 | TDM3404 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
6 | TDM3405 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
7 | TDM3407 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
8 | TDM3408 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
9 | TDM3411 |
Techcode |
2N AND 2P-CHANNEL Enhancement Mode MOSFET | |
10 | TDM3412 |
Techcode |
Dual N-Channel Enhancement Mode MOSFET | |
11 | TDM3413 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
12 | TDM3415 |
Techcode |
P-Channel Enhancement Mode MOSFET |