The TDM3415 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ‐30V/‐17.6A RDS(ON) < 15mΩ @ VGS=‐4.5V RDS(ON) < 9mΩ @ VGS=‐10V Reliable and Rugged HBM ESD capability level of 8KV typical Lead fr.
‐30V/‐17.6A
RDS(ON) < 15mΩ @ VGS=‐4.5V
RDS(ON) < 9mΩ @ VGS=‐10V
Reliable and Rugged
HBM ESD capability level of 8KV typical
Lead free product is available
DFN5X6 Package
Application
PWM applications
Load switch
Power management
DATASHEET
TDM3415
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter Drain‐Source Voltage Gate‐Source Voltage
Continuous Drain Current(VGS=‐10V) (note1)
300μs Pulsed Drain Current Tested (note1) Diode Continuous Forward Current (note2)
Maximum Power Dissipation (note1)
Maximum Junct.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TDM3411 |
Techcode |
2N AND 2P-CHANNEL Enhancement Mode MOSFET | |
2 | TDM3412 |
Techcode |
Dual N-Channel Enhancement Mode MOSFET | |
3 | TDM3413 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
4 | TDM3415S |
Techcode |
N-Channel Enhancement Mode MOSFET | |
5 | TDM3404 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
6 | TDM3405 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
7 | TDM3407 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
8 | TDM3408 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
9 | TDM3421 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
10 | TDM3424 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
11 | TDM3426 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
12 | TDM3426B |
Techcode |
N-Channel Enhancement Mode MOSFET |