The TDM3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON) < 7mΩ @ VGS=1.8V RDS(ON) < 4.5mΩ @ VGS=2.5V RDS(ON) < 3.4mΩ @ VGS=4.5V High Power and current handling capability Surface Mount Package Lead Free and Green Devi.
RDS(ON) < 7mΩ @ VGS=1.8V RDS(ON) < 4.5mΩ @ VGS=2.5V RDS(ON) < 3.4mΩ @ VGS=4.5V
High Power and current handling capability
Surface Mount Package
Lead Free and Green Devices available(RoHS Compliant)
Application
PWM applications
Load switch
Power management
Powered Systems
DATASHEET
TDM3404
PPAK-3
*3-8
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage
VGS
Diode Continuous Forward Current Drain Current @ Continuous
IS(TC=25℃) ID(TC=25℃) ID(TC=100℃)
Drain Current @ Current‐Pulsed (Note 1)
IDM(TC=25℃)
Max.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TDM3405 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
2 | TDM3407 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
3 | TDM3408 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
4 | TDM3411 |
Techcode |
2N AND 2P-CHANNEL Enhancement Mode MOSFET | |
5 | TDM3412 |
Techcode |
Dual N-Channel Enhancement Mode MOSFET | |
6 | TDM3413 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
7 | TDM3415 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
8 | TDM3415S |
Techcode |
N-Channel Enhancement Mode MOSFET | |
9 | TDM3421 |
Techcode |
P-Channel Enhancement Mode MOSFET | |
10 | TDM3424 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
11 | TDM3426 |
Techcode |
N-Channel Enhancement Mode MOSFET | |
12 | TDM3426B |
Techcode |
N-Channel Enhancement Mode MOSFET |