SiSS27DN - Vishay

SiSS27DN P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiSS27DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0056 at VGS = - 10 V - 30 0.0070 at VGS = - 6 V 0.0090 at VGS = - 4.5 V ID (A) - 50e - 50e - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S 3.3 mm 3.3 mm S 1 S 2 S 3 G 4 0.75 mm FEATURES • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Pack.

Features

• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Notebook Computers and Mobile Computing - Adaptor Switch - Load Switch - DC/DC Converter - Power Management G S D 8 D 7 D 6 D 5 Bottom View Ordering Information: SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gat.