SiSS23DN - Vishay

SiSS23DN P-Channel 20V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET SiSS23DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0045 at VGS = - 4.5 V - 20 0.0063 at VGS = - 2.5 V 0.0115 at VGS = - 1.8 V ID (A) - 50e - 50e - 50e PowerPAK 1212-8S Qg (Typ.) 93 nC 3.3 mm 3.3 mm S S 1 2 S 3 G 4 0.75 mm D 8 D 7 D 6 D 5 Bottom View Ordering Information: SiSS23DN-T1-G.

Features

• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch - Power Management G - Battery Management S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C).