SISS27DN-T1-GE3 - Kexin

SISS27DN-T1-GE3 30V P-Channel MOSFET

Product Summary The SISS27DN uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. • RoHS and Halogen-Free Compliant VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) -30V -50A < 6.2mΩ < 8.9mΩ 100% UIS Tested 100% Rg Tested PowerPAK .

Features

-20 -44 97 83 33 6.25 4 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 45 1.1 Max 20 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W SMD Type MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=-250µA, VGS=0V VDS=-30V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Ga.