SISS40DN - Vishay

SISS40DN N-Channel MOSFET

N-Channel 100 V (D-S) MOSFET SiSS40DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) () (Max.) 0.0210 at VGS = 10 V 0.0230 at VGS = 7.5 V 0.0260 at VGS = 6 V ID (A)f 36.5 35 32 Qg (Typ.) 10 nC 3.3 mm PowerPAK 1212-8S 3.3 mm S 1 S 2 S 3 G 4 0.75 mm D 8 D 7 D 6 D 5 Bottom View Ordering Information: SiSS40DN-T1-GE3 (Lead (Pb)-fr.

Features

• ThunderFET® Technology Optimizes Balance of RDS(on), Qg, Qsw and Qoss
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Primary side switch
• Synchronous Rectification
• DC/DC Conversion
• Load Switching
• Boost Converters
• DC/AC Inverters D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current (t = 300 µs.