SISS28DN - Vishay

SISS28DN N-Channel MOSFET

www.vishay.com SiSS28DN Vishay Siliconix N-Channel 25 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) () (MAX.) 0.00152 at VGS = 10 V 0.00224 at VGS = 4.5 V ID (A) a, g 60 60 Qg (TYP.) 21.8 nC PowerPAK® 1212-8S D D D 6 7 5 D 8 3.3 mm 1 Top View 3.3 mm 1 4 3 S 2 S S G Bottom View Ordering Information:  SiSS28DN-T1-GE3 (lead (Pb)-f.

Features

• TrenchFET® Gen IV power MOSFET
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• VRMs and embedded DC/DC
• Synchronous buck converter
• Load switching
• Battery management D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain C.